IRFSL59N10D

更新时间： 2024-01-04 06:17:34

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	141K
描述
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)

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中文翻译

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数据手册

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IRFSL59N10D 数据手册

PD - 93890

IRFB59N10D

IRFS59N10D

SMPS MOSFET

IRFSL59N10D

HEXFET^®Power MOSFET

Applications

V_DSS

100V

R_DS(on)max

I_D

59A

l High frequency DC-DC converters

0.025Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRFS59N10D

TO-262

IRFSL59N10D

TO-220AB

IRFB59N10D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

236

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

200

Linear Derating Factor

1.3

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

3.3

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Half-bridge and Full-bridge DC-DC Converters

l Full-bridge Inverters

Notes through are on page 11

www.irf.com

4/17/00

12 3 4 5 6 7...11

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