Datasheet > IRFSL7762PBF

IRFSL7762PBF

更新时间： 2024-11-18 20:07:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	602K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IRFSL7762PBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	8.52
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IRFSL7762PBF 数据手册

StrongIRFET™

IRFS7762PbF

IRFSL7762PbF

HEXFET^®Power MOSFET

Application

 Brushed motor drive applications

 BLDC motor drive applications

 Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC inverters

V_DSS

75V

R_DS(on)typ.

5.6m

6.7m

85A

max

I_D

Benefits

 Improved gate, avalanche and dynamic dV/dt ruggedness

 Fully characterized capacitance and avalanche SOA

 Enhanced body diode dV/dt and dI/dt capability

 Lead-free, RoHS compliant

TO-262

IRFSL7762PbF

D2Pak

IRFS7762PbF

Gate

Drain

Source

Standard Pack

Form

Base part number

IRFSL7762PbF

IRFS7762PbF

Package Type

TO-262

Orderable Part Number

Quantity

Tube

IRFSL7762PbF

IRFS7762PbF

D²-Pak

Tape and Reel Left

800

IRFS7762TRLPbF

100

= 51A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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February 19, 2015

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