Datasheet > IRFSL9N60A, SiHFSL9N60A

IRFSL9N60A, SiHFSL9N60A

更新时间： 2024-09-10 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	256K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFSL9N60A, SiHFSL9N60A 数据手册

浏览型号IRFSL9N60A, SiHFSL9N60A的Datasheet PDF文件第2页

浏览型号IRFSL9N60A, SiHFSL9N60A的Datasheet PDF文件第3页

浏览型号IRFSL9N60A, SiHFSL9N60A的Datasheet PDF文件第4页

浏览型号IRFSL9N60A, SiHFSL9N60A的Datasheet PDF文件第5页

浏览型号IRFSL9N60A, SiHFSL9N60A的Datasheet PDF文件第6页

IRFSL9N60A, SiHFSL9N60A

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low gate charge Q_gresults in simple drive

requirement

I²PAK (TO-262)

Available

• Improved gate, avalanche, and dynamic dv/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY



V_DS(V)

600

_DS(on)()

V_GS= 10 V

0.75

APPLICATIONS

Q_gmax. (nC)

• Switch mode power supply (SMPS)

• Uninterruptable power supply

• High speed power switching

_gs(nC)

_gd(nC)

Configuration

Single

• This device is only for through-hole application

APPLICABLE OFF LINE SMPS TOPOLOGIES

• Active clamped forward

• Main switch

ORDERING INFORMATION

Package

I²PAK (TO-262)

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFSL9N60A-GE3

IRFSL9N60APbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

9.2

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

5.8

Pulsed drain current ^a

I_DM

Linear derating factor

1.3

W/°C

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

Maximum power dissipation

E_AS

I_AR

290

9.2

E_AR

_C= 25 °C

P_D

170

Peak diode recovery dv/dt ^c

dv/dt

T_J, T_stg

5.0

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

-55 to +150

300

°C

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 6.8 mH, R_g= 25 , I_AS= 9.2 A (see fig. 12)

c. I_SD 9.2 A, di/dt  50 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

S20-0684-Rev. D, 07-Sep-2020

Document Number: 90362

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRFSL9N60A, SiHFSL9N60A相关器件

型号	品牌	获取价格	描述	数据表
IRFSL9N60APBF	VISHAY	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60APBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRL	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRR	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRR	VISHAY	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSZ14A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-220AB
IRFSZ20	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 13A I(D) \| SOT-186

与IRFSL9N60A, SiHFSL9N60A相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

65
AIC1781A 电池充电控制器深度解析
2024-09-03

55
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

89
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

100

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFSL9N60A, SiHFSL9N60A

IRFSL9N60A, SiHFSL9N60A 数据手册

与IRFSL9N60A, SiHFSL9N60A相关器件

与IRFSL9N60A, SiHFSL9N60A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFSL9N60A, SiHFSL9N60A

IRFSL9N60A, SiHFSL9N60A 数据手册

与IRFSL9N60A, SiHFSL9N60A相关器件

与IRFSL9N60A, SiHFSL9N60A相关文章

您还可以找

您在本页遇到什么问题？