5秒后页面跳转
IRFSL7437 PDF预览

IRFSL7437

更新时间: 2024-11-19 11:15:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 297K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

IRFSL7437 数据手册

 浏览型号IRFSL7437的Datasheet PDF文件第2页浏览型号IRFSL7437的Datasheet PDF文件第3页浏览型号IRFSL7437的Datasheet PDF文件第4页浏览型号IRFSL7437的Datasheet PDF文件第5页浏览型号IRFSL7437的Datasheet PDF文件第6页浏览型号IRFSL7437的Datasheet PDF文件第7页 
StrongIRFET™  
IRFS7437PbF  
IRFSL7437PbF  
Applications  
l Brushed Motor drive applications  
l BLDC Motor drive applications  
l Battery powered circuits  
l Half-bridge and full-bridge topologies  
l Synchronous rectifier applications  
l Resonant mode power supplies  
l OR-ing and redundant power switches  
l DC/DC and AC/DC converters  
l DC/AC Inverters  
HEXFET® Power MOSFET  
VDSS  
40V  
D
RDS(on) typ.  
max.  
1.4mΩ  
1.8mΩ  
G
ID  
250A  
(Silicon Limited)  
ID  
195A  
(Package Limited)  
S
D
D
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
S
S
D
l Fully Characterized Capacitance and Avalanche  
G
G
SOA  
D2Pak  
TO-262  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
IRFSL7437PbF  
IRFS7437PbF  
l Halogen-Free  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Tube  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
50  
50  
800  
IRFSL7437PbF  
IRFS7437PbF  
IRFS7437PbF  
TO-262  
D2Pak  
D2Pak  
IRFSL7437PbF  
IRFS7437PbF  
IRFS7437TRLPbF  
Tape and Reel Left  
6
5
4
3
2
1
0
250  
200  
150  
100  
50  
LIMITED BY PACKAGE  
I
= 100A  
D
T
= 125°C  
= 25°C  
J
T
J
0
4.0  
6.0  
8.0 10.0 12.0 14.0 16.0 18.0 20.0  
, Gate-to-Source Voltage (V)  
25  
50  
75  
100  
125  
150  
175  
V
T
, Case Temperature (°C)  
GS  
C
Fig 2. Maximum Drain Current vs. Case Temperature  
Submit Datasheet Feedback  
Fig 1. Typical On-Resistance vs. Gate Voltage  
www.irf.com © 2015 International Rectifier  
1
January 6, 2015  

与IRFSL7437相关器件

型号 品牌 获取价格 描述 数据表
IRFSL7437PBF INFINEON

获取价格

HEXFETPower MOSFET
IRFSL7440 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRFSL7440PbF INFINEON

获取价格

Applications
IRFSL7530PBF INFINEON

获取价格

Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Me
IRFSL7537 INFINEON

获取价格

The?StrongIRFET? power MOSFET family is?optimized for low RDS(on)?and high current capabil
IRFSL7537PBF INFINEON

获取价格

Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, M
IRFSL7730PBF INFINEON

获取价格

Power Field-Effect Transistor
IRFSL7734PBF INFINEON

获取价格

Power Field-Effect Transistor,
IRFSL7762PBF INFINEON

获取价格

Power Field-Effect Transistor,
IRFSL9N60A INFINEON

获取价格

SMPS MOSFET