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IRFSL5615

更新时间： 2024-11-21 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 354K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFSL5615 数据手册

 浏览型号IRFSL5615的Datasheet PDF文件第2页浏览型号IRFSL5615的Datasheet PDF文件第3页浏览型号IRFSL5615的Datasheet PDF文件第4页浏览型号IRFSL5615的Datasheet PDF文件第5页浏览型号IRFSL5615的Datasheet PDF文件第6页浏览型号IRFSL5615的Datasheet PDF文件第7页 
PD - 96204  
DIGITAL AUDIO MOSFET  
IRFS5615PbF  
IRFSL5615PbF  
Features  
Key Parameters  
• Key Parameters Optimized for Class-D Audio  
Amplifier Applications  
VDS  
150  
34.5  
26  
V
m
RDS(ON) typ. @ 10V  
Qg typ.  
• Low RDSON for Improved Efficiency  
• Low QG and QSW for Better THD and Improved  
Efficiency  
nC  
nC  
Ω
Qsw typ.  
11  
RG(int) typ.  
TJ max  
2.7  
175  
°C  
• Low QRR for Better THD and Lower EMI  
• 175°C Operating Junction Temperature for  
Ruggedness  
D
D
D
• Can Deliver up to 300W per Channel into 4Ω Load in  
Half-Bridge Configuration Amplifier  
S
S
G
D
G
G
D2Pak  
IRFS5615PbF  
TO-262  
IRFSL5615PbF  
S
G
D
S
Gate  
Drain  
Source  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes  
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode  
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance  
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction  
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,  
robust and reliable device for ClassD audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
150  
±20  
33  
Units  
VDS  
V
VGS  
Gate-to-Source Voltage  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
24  
A
140  
144  
72  
Power Dissipation  
PD @TC = 25°C  
PD @TC = 100°C  
W
Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
TJ  
Operating Junction and  
Storage Temperature Range  
-55 to + 175  
TSTG  
°C  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
Max.  
1.045  
40  
Units  
Junction-to-Case  
Rθ  
JC  
°C/W  
Junction-to-Ambient (PCB Mount)  
RθJA  
Notes  through † are on page 2  
www.irf.com  
1
12/18/08  
1234567...10

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