Datasheet > 晶体管 > 功率场效应晶体管> IRFSL4620PBF

IRFSL4620PBF

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	360K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFSL4620PBF 数据手册

PD -96203

IRFS4620PbF

IRFSL4620PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

200V

63.7m

77.5m

24A

max.

l Hard Switched and High Frequency Circuits

I_D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS4620PbF

TO-262

IRFSL4620PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

100

P_D@T_C= 25°C

144

Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

113

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.045

Units

R_θJC

Junction-to-Case

°C/W

R_θJA

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

12/18/08

12 3 4 5 6 7...10

中文翻译

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