IRFSL3207

更新时间： 2024-11-01 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	385K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFSL3207 数据手册

PD - 96893A

IRFB3207

IRFS3207

IRFSL3207

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

75V

3.6m:

4.5m:

180A

max.

Benefits

l Worldwide Best R_DS(on)in TO-220

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

I_D

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS3207

TO-262

IRFSL3207

TO-220AB

IRFB3207

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

180c

130c

720

Units

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

P_D@T_C= 25°C

330

Maximum Power Dissipation

Linear Derating Factor

2.2

W/°C

V_GS

± 20

Gate-to-Source Voltage

5.8

Peak Diode Recovery f

Operating Junction and

dV/dt

T_J

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

910

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 16a, 16b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.45

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case k

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

°C/W

Junction-to-Ambient, TO-220 k

Junction-to-Ambient (PCB Mount) , D²Pak jk

–––

www.irf.com

11/3/04

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