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IRFSL41N15DTRRPBF PDF预览

IRFSL41N15DTRRPBF

更新时间: 2024-11-02 21:07:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 260K
描述
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IRFSL41N15DTRRPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.67Is Samacsys:N
雪崩能效等级(Eas):470 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):41 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):164 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFSL41N15DTRRPBF 数据手册

 浏览型号IRFSL41N15DTRRPBF的Datasheet PDF文件第2页浏览型号IRFSL41N15DTRRPBF的Datasheet PDF文件第3页浏览型号IRFSL41N15DTRRPBF的Datasheet PDF文件第4页浏览型号IRFSL41N15DTRRPBF的Datasheet PDF文件第5页浏览型号IRFSL41N15DTRRPBF的Datasheet PDF文件第6页浏览型号IRFSL41N15DTRRPBF的Datasheet PDF文件第7页 
PD - 93804B  
IRFB41N15D  
IRFIB41N15D  
IRFS41N15D  
IRFSL41N15D  
Applications  
l High frequency DC-DC converters  
HEXFET® Power MOSFET  
VDSS RDS(on) max  
ID  
Benefits  
0.045  
150V  
41A  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
TO-220AB  
IRFB41N15D  
D2Pak  
TO-262  
TO-220 FullPak  
IRFIB41N15D  
IRFS41N15D IRFSL41N15D  
Absolute Maximum Ratings  
Parameter  
Max.  
41  
Units  
A
I
I
I
@ T = 25°C  
C
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
@ T = 100°C  
C
29  
164  
3.1  
200  
48  
DM  
Power Dissipation, D2Pak  
P
P
P
@T = 25°C  
A
W
D
D
D
@T = 25°C  
C
Power Dissipation, TO-220  
Power Dissipation, Fullpak  
Linear Derating Factor, TO-220  
Linear Derating Factor, Fullpak  
Gate-to-Source Voltage  
@T = 25°C  
C
1.3  
W/°C  
0.32  
± 30  
V
V
GS  
Peak Diode Recovery dv/dt  
Operating Junction and  
dv/dt  
T
J
2.7  
V/ns  
-55 to + 175  
T
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
STG  
300 (1.6mm from case )  
1.1(10)  
N•m (lbf•in)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
0.50  
–––  
–––  
–––  
Max.  
0.75  
3.14  
–––  
62  
Units  
Rθ  
°C/W  
JC  
JC  
cs  
Junction-to-Case  
Junction-to-Case, Fullpak  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, TO-220  
Junction-to-Ambient, D2Pak  
JA  
JA  
JA  
40  
65  
Junction-to-Ambient, Fullpak  
Notes  through ‡ are on page 12  
www.irf.com  
1
07/16/03  

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