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IRFSL4310ZPBF PDF预览

IRFSL4310ZPBF

更新时间: 2024-10-02 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 427K
描述
HEXFET Power MOSFET

IRFSL4310ZPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, TO-262, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks 1 day
风险等级:7.84雪崩能效等级(Eas):130 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):127 A
最大漏极电流 (ID):120 A最大漏源导通电阻:0.006 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W最大脉冲漏极电流 (IDM):560 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFSL4310ZPBF 数据手册

 浏览型号IRFSL4310ZPBF的Datasheet PDF文件第2页浏览型号IRFSL4310ZPBF的Datasheet PDF文件第3页浏览型号IRFSL4310ZPBF的Datasheet PDF文件第4页浏览型号IRFSL4310ZPBF的Datasheet PDF文件第5页浏览型号IRFSL4310ZPBF的Datasheet PDF文件第6页浏览型号IRFSL4310ZPBF的Datasheet PDF文件第7页 
PD - 97115A  
IRFB4310ZPbF  
IRFS4310ZPbF  
IRFSL4310ZPbF  
HEXFET® Power MOSFET  
Applications  
D
VDSS  
RDS(on) typ.  
max.  
100V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
4.8m  
6.0m  
:
:
G
ID  
127A  
c
(Silicon Limited)  
ID  
75A  
S
S
(Package Limited)  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
Ruggedness  
D
D
l Fully Characterized Capacitance and Avalanche  
SOA  
S
D
S
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
D
D
G
G
G
D2Pak  
IRFS4310ZPbF  
TO-262  
IRFSL4310ZPbF  
TO-220AB  
IRFB4310ZPbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
127c  
90c  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current d  
75  
560  
PD @TC = 25°C  
250  
Maximum Power Dissipation  
W
1.7  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
18  
Peak Diode Recovery f  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy e  
EAS (Thermally limited)  
130  
mJ  
A
Avalanche Currentꢀc  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy g  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.6  
Units  
RθJC  
Junction-to-Case k  
RθCS  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220 k  
0.50  
–––  
–––  
62  
°C/W  
RθJA  
Junction-to-Ambient (PCB Mount) , D2Pak jk  
RθJA  
–––  
40  
www.irf.com  
1
4/27/07  

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