是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TO-262, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 470 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (ID): | 41 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 164 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFSL41N15DTRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFSL41N15DTRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFSL41N15DTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFSL4227PBF | INFINEON |
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Advanced Process Technology | |
IRFSL4228PBF | INFINEON |
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Advanced Process Technology | |
IRFSL4229PBF | INFINEON |
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High Repetitive Peak Current Capability for Reliable Operation | |
IRFSL42N20D | INFINEON |
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High frequency DC-DC converters | |
IRFSL4310 | INFINEON |
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HEXFET Power MOSFET | |
IRFSL4310 | FREESCALE |
获取价格 |
HEXFET Power MOSFET | |
IRFSL4310PBF | INFINEON |
获取价格 |
HEXFET㈢Power MOSFET |