IRFSL41N15DPBF

更新时间： 2024-11-02 03:00:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	338K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFSL41N15DPBF 数据手册

PD - 94927A

IRFB41N15DPbF

IRFIB41N15DPbF

IRFS41N15DPbF

IRFSL41N15DPbF

Applications

l HighfrequencyDC-DCconverters

l Lead-Free

HEXFET^®Power MOSFET

V_DSSR_DS(on)max

I_D

Benefits

0.045

150V

41A

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

TO-220AB

IRFB41N15D

D²Pak

TO-262

TO-220 FullPak

IRFIB41N15D

IRFS41N15D IRFSL41N15D

Absolute Maximum Ratings

Parameter

Max.

Units

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

164

3.1

200

Power Dissipation, D²Pak

@T = 25°C

Power Dissipation, TO-220

Power Dissipation, Fullpak

Linear Derating Factor, TO-220

Linear Derating Factor, Fullpak

Gate-to-Source Voltage

@T = 25°C

1.3

W/°C

0.32

± 30

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

2.7

V/ns

-55 to + 175

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

STG

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Thermal Resistance

Parameter

Typ.

–––

0.50

–––

Max.

0.75

3.14

–––

Units

R_θ

°C/W

Junction-to-Case

Junction-to-Case, Fullpak

R_θ

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, TO-220

Junction-to-Ambient, D²Pak

Junction-to-Ambient, Fullpak

Notes through are on page 12

www.irf.com

08/10/06

12 3 4 5 6 7...13

中文翻译

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