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IRFSL4127PBF PDF预览

IRFSL4127PBF

更新时间: 2024-02-24 16:22:54
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
10页 356K
描述
HEXFET Power MOSFET

IRFSL4127PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-262AA
包装说明:LEAD FREE, TO-262, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.72雪崩能效等级(Eas):250 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):72 A
最大漏极电流 (ID):72 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):375 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFSL4127PBF 数据手册

 浏览型号IRFSL4127PBF的Datasheet PDF文件第2页浏览型号IRFSL4127PBF的Datasheet PDF文件第3页浏览型号IRFSL4127PBF的Datasheet PDF文件第4页浏览型号IRFSL4127PBF的Datasheet PDF文件第5页浏览型号IRFSL4127PBF的Datasheet PDF文件第6页浏览型号IRFSL4127PBF的Datasheet PDF文件第7页 
PD - 96177  
IRFS4127PbF  
IRFSL4127PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
200V  
18.6m  
22m  
RDS(on) typ.  
G
max.  
l Hard Switched and High Frequency Circuits  
ID  
72A  
S
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
D
D
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
D
S
G
G
D2Pak  
IRFS4127PbF  
TO-262  
IRFSL4127PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
72  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
51  
300  
375  
2.5  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
57  
Gate-to-Source Voltage  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
250  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.4  
Units  
RθJC  
Junction-to-Case  
°C/W  
RθJA  
–––  
40  
Junction-to-Ambient  
www.irf.com  
1
09/16/08  

IRFSL4127PBF 替代型号

型号 品牌 替代类型 描述 数据表
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