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STP6N95K5 PDF预览

STP6N95K5

更新时间: 2024-11-21 12:28:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
23页 1227K
描述
N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

STP6N95K5 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:1.68雪崩能效等级(Eas):90 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:950 V
最大漏极电流 (Abs) (ID):9 A最大漏极电流 (ID):9 A
最大漏源导通电阻:1.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):90 W
最大脉冲漏极电流 (IDM):36 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP6N95K5 数据手册

 浏览型号STP6N95K5的Datasheet PDF文件第2页浏览型号STP6N95K5的Datasheet PDF文件第3页浏览型号STP6N95K5的Datasheet PDF文件第4页浏览型号STP6N95K5的Datasheet PDF文件第5页浏览型号STP6N95K5的Datasheet PDF文件第6页浏览型号STP6N95K5的Datasheet PDF文件第7页 
STD6N95K5, STF6N95K5,  
STP6N95K5, STW6N95K5, STU6N95K5  
N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH™ 5  
Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK  
Datasheet — production data  
Features  
TAB  
Type  
VDSS RDS(on)max.  
ID  
PW  
3
1
STD6N95K5  
STF6N95K5  
9 A  
9 A  
90 W  
25 W  
3
DPAK  
2
1
TO-220FP  
STP6N95K5 950 V  
STW6N95K5  
< 1.25 Ω  
TAB  
9 A  
90 W  
TAB  
STU6N95K5  
3
DPAK 950 V worldwide best RDS(on)  
Worldwide best FOM (figure of merit)  
Ultra low gate charge  
3
2
3
2
1
2
1
1
IPAK  
TO-247  
TO-220  
100% avalanche tested  
Zener-protected  
Figure 1.  
Internal schematic diagram  
Applications  
D(2,TAB)  
Switching applications  
Description  
G(1)  
These devices are N-channel Power MOSFETs  
developed using SuperMESH™ 5 technology.  
This revolutionary, avalanche-rugged, high  
voltage Power MOSFET technology is based on  
an innovative proprietary vertical structure. The  
result is a drastic reduction in on-resistance and  
ultra low gate charge for applications which  
require superior power density and high  
efficiency.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD6N95K5  
STF6N95K5  
STP6N95K5  
STW6N95K5  
STU6N95K5  
DPAK  
TO-220FP  
TO-220  
TO-247  
IPAK  
Tape and reel  
6N95K5  
Tube  
August 2012  
Doc ID 16958 Rev 3  
1/23  
This is information on a product in full production.  
www.st.com  
23  
 

STP6N95K5 替代型号

型号 品牌 替代类型 描述 数据表
STP20N95K5 STMICROELECTRONICS

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STP19NM50N STMICROELECTRONICS

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N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247

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