5秒后页面跳转
STP6NB80 PDF预览

STP6NB80

更新时间: 2024-02-01 13:12:14
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 48K
描述
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

STP6NB80 数据手册

 浏览型号STP6NB80的Datasheet PDF文件第2页浏览型号STP6NB80的Datasheet PDF文件第3页浏览型号STP6NB80的Datasheet PDF文件第4页浏览型号STP6NB80的Datasheet PDF文件第5页浏览型号STP6NB80的Datasheet PDF文件第6页 
STP6NB80  
STP6NB80FP  
N - CHANNEL 800V - 1.6  
- 5.7A - TO-220/TO-220FP  
PowerMESH  
MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 1.9  
ID  
STP6NB80  
STP6NB80FP  
800 V  
800 V  
5.7 A  
5.7 A  
< 1.9 Ω  
TYPICAL RDS(on) = 1.6 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
1
2
1
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP6NB80FP  
Unit  
STP6NB80  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
800  
800  
V
V
± 30  
V
5.7  
3.6  
22.8  
125  
1.0  
4
5.7(*)  
2
A
ID  
A
IDM ()  
Ptot  
22.8  
40  
A
Total Dissipation at Tc = 25 oC  
W
Derating Factor  
0.32  
4
W/oC  
V/ns  
V
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
≤ ≤ µ ≤ ≤  
( 1) ISD 5.76 A, di/dt 200 A/ s, VDD V(BR)DSS, Tj TJMAX  
( ) Pulse width limited by safe operating area  
(*) Limited only maximum temperature allowed  
1/6  
September 1998  

STP6NB80 替代型号

型号 品牌 替代类型 描述 数据表
STP5NK100Z STMICROELECTRONICS

功能相似

N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STP55NF06 STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220
STW20NK50Z STMICROELECTRONICS

功能相似

N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

与STP6NB80相关器件

型号 品牌 获取价格 描述 数据表
STP6NB80FP STMICROELECTRONICS

获取价格

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
STP6NB90 STMICROELECTRONICS

获取价格

N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET
STP6NB90FP STMICROELECTRONICS

获取价格

N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET
STP6NC60 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2
STP6NC60FP STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2
STP6NC80FP ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP
STP6NC80Z STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPA
STP6NC80ZFP STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPA
STP6NC90Z STMICROELECTRONICS

获取价格

N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DP
STP6NC90ZFP STMICROELECTRONICS

获取价格

N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DP