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STP6NB90FP PDF预览

STP6NB90FP

更新时间: 2024-02-22 20:17:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 111K
描述
N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET

STP6NB90FP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliant风险等级:5.67
其他特性:HIGH VOLTAGE雪崩能效等级(Eas):250 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):5.8 A
最大漏极电流 (ID):5.8 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):23 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP6NB90FP 数据手册

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STP6NB90  
STP6NB90FP  
N - CHANNEL 900V - 1.7  
- 5.8A - TO-220/TO-220FP  
PowerMESH MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP6NB90  
STP6NB90FP  
900 V  
900 V  
<2 Ω  
<2  
5.8 A  
5.8 A  
TYPICAL RDS(on) = 1.7  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
DESCRIPTION  
1
1
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES(SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENTAND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP6NB90FP  
Unit  
STP6NB90  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
900  
900  
V
V
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
± 30  
V
5.8  
3.6  
23  
5.8(*)  
3.6(*)  
23  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
IDM()  
Ptot  
Drain Current (pulsed)  
A
o
Total Dissipation at Tc = 25 C  
135  
0.92  
4.5  
40  
W
Derating Factor  
0.32  
4.5  
W/oC  
V/ns  
V
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
)  
(
6Α, µ ≤ ≤  
di/dt 200 A/ s, VDD V(BR)DSS, Tj TJMAX  
Pulse width limited by safe operating area  
( 1) ISD  
(*) Limited only by maximum temperature allowed  
1/9  
June 1999  

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