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IRFSL3806PBF PDF预览

IRFSL3806PBF

更新时间: 2024-11-02 04:18:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
11页 565K
描述
HEXFETPower MOSFET

IRFSL3806PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.94
雪崩能效等级(Eas):73 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):43 A最大漏极电流 (ID):43 A
最大漏源导通电阻:0.0158 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):71 W
最大脉冲漏极电流 (IDM):170 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFSL3806PBF 数据手册

 浏览型号IRFSL3806PBF的Datasheet PDF文件第2页浏览型号IRFSL3806PBF的Datasheet PDF文件第3页浏览型号IRFSL3806PBF的Datasheet PDF文件第4页浏览型号IRFSL3806PBF的Datasheet PDF文件第5页浏览型号IRFSL3806PBF的Datasheet PDF文件第6页浏览型号IRFSL3806PBF的Datasheet PDF文件第7页 
PD - 97310  
IRFB3806PbF  
IRFS3806PbF  
Applications  
IRFSL3806PbF  
HEXFET® Power MOSFET  
60V  
l High Efficiency Synchronous Rectification in  
SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
12.6m  
15.8m  
43A  
G
Benefits  
ID  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
D
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
S
S
S
D
D
G
G
G
D2Pak  
TO-262  
TO-220AB  
IRFB3806PbF  
IRFS3806PbF  
IRFSL3806PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
Max.  
43  
Units  
A
ID @ TC = 100°C  
IDM  
31  
170  
71  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
0.47  
20  
W/°C  
V
VGS  
Gate-to-Source Voltage  
24  
Peak Diode Recovery e  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
73  
25  
mJ  
A
Avalanche Current c  
IAR  
Repetitive Avalanche Energy f  
EAR  
7.1  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
–––  
0.50  
–––  
–––  
Junction-to-Case j  
2.12  
–––  
62  
RθCS  
RθJA  
RθJA  
°C/W  
Case-to-Sink, Flat Greased Surface, TO-220  
Junction-to-Ambient, TO-220 ij  
Junction-to-Ambient (PCB Mount) , D2Pak ij  
40  
www.irf.com  
1
02/29/08  

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