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IRFSL4010PBF PDF预览

IRFSL4010PBF

更新时间: 2024-11-02 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON PC开关脉冲晶体管
页数 文件大小 规格书
10页 285K
描述
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

IRFSL4010PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, TO-262, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.71Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:873881
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-262_1
Samacsys Released Date:2017-08-23 17:03:51Is Samacsys:N
雪崩能效等级(Eas):318 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):180 A最大漏极电流 (ID):180 A
最大漏源导通电阻:0.0047 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):375 W
最大脉冲漏极电流 (IDM):720 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFSL4010PBF 数据手册

 浏览型号IRFSL4010PBF的Datasheet PDF文件第2页浏览型号IRFSL4010PBF的Datasheet PDF文件第3页浏览型号IRFSL4010PBF的Datasheet PDF文件第4页浏览型号IRFSL4010PBF的Datasheet PDF文件第5页浏览型号IRFSL4010PBF的Datasheet PDF文件第6页浏览型号IRFSL4010PBF的Datasheet PDF文件第7页 
PD - 96186A  
IRFS4010PbF  
IRFSL4010PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
RDS(on) typ.  
100V  
3.9m  
4.7m  
180A  
G
max.  
l Hard Switched and High Frequency Circuits  
ID  
S
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
S
D
G
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
D2Pak  
IRFS4010PbF  
TO-262  
IRFSL4010PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
180  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
127  
A
720  
PD @TC = 25°C  
W
375  
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
31  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
318  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
Rθ  
Junction-to-Case  
JC  
°C/W  
RθJA  
–––  
Junction-to-Ambient (PCB Mount)  
www.irf.com  
1
07/07/11  

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