型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS242 | SAMSUNG |
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Power Field-Effect Transistor, 11A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS244 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10.2A I(D) | TO-247VAR | |
IRFS244A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) | TO-247VAR | |
IRFS244B | FAIRCHILD |
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250V N-Channel MOSFET | |
IRFS250 | FAIRCHILD |
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200V N-Channel MOSFET | |
IRFS250A | INFINEON |
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Advanced Power MOSFET | |
IRFS250B | FAIRCHILD |
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200V N-Channel MOSFET | |
IRFS251 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20.7A I(D) | SOT-186VAR | |
IRFS252 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 17.3A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, M | |
IRFS253 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 17.3A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, M |