生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 2.7 A | 最大漏极电流 (ID): | 2.7 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 25 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR212 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.1A I(D) | TO-252AA | |
IRFR212PBF | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR212TR | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR214 | INFINEON |
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Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) | |
IRFR214 | KERSEMI |
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Power MOSFET | |
IRFR214 | VISHAY |
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Power MOSFET | |
IRFR214 | INTERSIL |
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2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs | |
IRFR214, IRFU214, SiHFR214, SiHFU214 | VISHAY |
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Power MOSFET | |
IRFR214_17 | VISHAY |
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Power MOSFET | |
IRFR214A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA |