Datasheet > IRFR210TRLPBFA

IRFR210TRLPBFA

更新时间： 2024-11-04 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4915K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR210TRLPBFA 数据手册

IRFR210, IRFU210, SiHFR210, SiHFU210

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= 10 V

1.5

RoHS*

• Surface Mount (IRFR210/SiHFR210)

• Straight Lead (IRFU210/SiHFU210)

• Available in Tape and Reel

• Fast Switching

Q_g(Max.) (nC)

8.2

1.8

COMPLIANT

_gs(nC)

_gd(nC)

4.5

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR210PbF

SiHFR210-E3

IRFR210

DPAK (TO-252)

IRFR210TRPbF^a

SiHFR210T-E3^a

IRFR210TR^a

DPAK (TO-252)

IPAK (TO-251)

IRFU210PbF

SiHFU210-E3

IRFU210

IRFR210TRLPbF^a

SiHFR210TL-E3^a

IRFR210TRL^a

Lead (Pb)-free

IRFR210TRR^a

SiHFR210TR^a

SnPb

SiHFR210

SiHFR210TL^a

SiHFR210T^a

SiHFU210

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

200

V_GS

T_C= 25 °C

T_C=100°C

2.6

Continuous Drain Current

V_GSat 10 V

I_D

1.7

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

0.020

130

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

2.7

Repetitive Avalanche Energy^a

E_AR

2.5

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 28 mH, R_G= 25 Ω, I_AS= 2.6 A (see fig. 12).

c. I_SD≤ 2.6 A, dI/dt ≤ 70 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFR210TRLPBFA相关器件

型号	品牌	获取价格	描述	数据表
IRFR210TRPBF	VISHAY	获取价格	Power MOSFET
IRFR210TRPBFA	KERSEMI	获取价格	Power MOSFET
IRFR210TRR	VISHAY	获取价格	Power MOSFET
IRFR210TRRA	KERSEMI	获取价格	Power MOSFET
IRFR210TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRFR211	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.7A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRFR212	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 2.1A I(D) \| TO-252AA
IRFR212PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRFR212TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRFR214	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

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