IRFP460N

更新时间： 2024-11-24 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	163K
描述
Power MOSFET

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IRFP460N 数据手册

IRFP460N, SiHFP460N

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

R_DS(on)(Ω)

V_GS= 10 V

0.24

• Improved Gate, Avalanche and Dynamic dV/dt RoHS*

Q_g(Max.) (nC)

Q_gs(nC)

124

COMPLIANT

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

_gd(nC)

• Effective C_ossSpecified

• Lead (Pb)-free Available

Configuration

Single

TO-247

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge

• Power Factor Correction Boost

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP460NPbF

SiHFP460N-E3

IRFP460N

Lead (Pb)-free

SnPb

SiHFP460N

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

2.2

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

340

E_AR

280

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 1.8 mH, R_G= 25 Ω, I_AS= 20 A (see fig. 12).

c. I_SD≤ 20 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91236

S-Pending-Rev. B, 23-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

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