Datasheet > IRFIB7N50L

IRFIB7N50L

更新时间： 2024-09-16 03:09:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
9页	216K
描述
HEXFET Power MOSFET

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数据手册

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IRFIB7N50L 数据手册

PD - 95888

SMPS MOSFET

IRFIB7N50L

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

Trr _typ.

I_D

V_DSSR_DS(on)

typ.

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

500V

85ns 6.8A

320mΩ

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise

immunity.

TO-220 Full-Pak

Absolute Maximum Ratings

Parameter

Max.

6.8

4.3

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.37

±30

W/°C

V_GS

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10lb in (1.1N m)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

Continuous Source Current

––– –––

6.8

(Body Diode)

Pulsed Source Current

showing the

integral reverse

(Body Diode)

p-n junction diode.

T = 25°C, I = 6.8A, V = 0V

J S GS

Diode Forward Voltage

1.5

T = 25°C, I = 6.8A

Reverse Recovery Time

Reverse Recovery Charge

–––

130

T_J= 125°C, di/dt = 100A/µs

––– 130 200

T = 25°C, I = 6.8A, V = 0V

––– 280 420 nC

––– 570 860

T_J= 125°C, di/dt = 100A/µs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 5.9

8.9

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

7/30/04

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