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IRFIBC40GLC PDF预览

IRFIBC40GLC

更新时间: 2024-11-24 14:53:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 895K
描述
Power MOSFET

IRFIBC40GLC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.05
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):3.5 A
最大漏极电流 (ID):4 A最大漏源导通电阻:1.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFIBC40GLC 数据手册

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IRFIBC40GLC  
Vishay Siliconix  
www.vishay.com  
Power MOSFET  
FEATURES  
D
TO-220 FULLPAK  
• Isolated package  
• High voltage isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
• Sink to lead creepage distance = 4.8 mm  
• Dynamic dV/dt rating  
G
• Low thermal resistance  
S
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
D
G
N-Channel MOSFET  
DESCRIPTION  
PRODUCT SUMMARY  
VDS (V)  
Third generation power MOSFETs from Vishay provides the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost  
effectiveness.  
600  
RDS(on) (Ω)  
VGS = 10 V  
1.2  
Qg max. (nC)  
39  
10  
19  
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. This isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
Q
gs (nC)  
gd (nC)  
Q
Configuration  
Single  
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFIBC40GLCPbF  
Lead (Pb)-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
3.5  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
2.2  
A
Pulsed drain current a  
IDM  
14  
Linear derating factor  
0.32  
320  
W/°C  
mJ  
A
Single pulse avalanche energy b  
Repetitive avalanche current a  
Repetitive avalanche energy a  
Maximum power dissipation  
Peak diode recovery dV/dt c  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
Mounting torque  
EAS  
IAR  
3.5  
EAR  
4.0  
mJ  
W
T
C = 25 °C  
PD  
40  
dV/dt  
TJ, Tstg  
3.0  
V/ns  
-55 to +150  
300  
°C  
For 10 s  
M3 screw  
0.6  
Nm  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = 50 V, starting TJ = 25 °C, L = 12 μH, RG = 25 Ω, IAS = 3.5 A (see fig. 12)  
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
S21-0976-Rev. D, 11-Oct-2021  
Document Number: 91181  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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