IRFIB8N50K

更新时间： 2024-11-08 22:24:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
8页	140K
描述
SMPS MOSFET

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中文翻译

获取价格

数据手册

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IRFIB8N50K 数据手册

PD - 94444

IRFIB8N50K

HEXFET^®Power MOSFET

SMPS MOSFET

Applications

V_DSS

R_DS(on)typ.

I_D

l Switch Mode Power Supply (SMPS)

l UninterruptIble Power Supply

l High Speed Power Switching

500V

290mΩ

6.7A

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

TO-220

FULL-PAK

Absolute Maximum Ratings

Parameter

Max.

6.7

4.2

Units

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.36

±30

W/°C

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

V/ns

-55 to + 150

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Typ.

–––

Max.

290

6.7

Units

E_AS

I_AR

Avalanche Current

Repetitive Avalanche Energy

E_AR

4.5

Thermal Resistance

Parameter

Typ.

–––

Max.

2.76

Units

R_θ

Junction-to-Case

Junction-to-Ambient

°C/W

–––

www.irf.com

4/21/04

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中文翻译

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