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IRFIBC20G PDF预览

IRFIBC20G

更新时间: 2024-11-23 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1479K
描述
Power MOSFET

IRFIBC20G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.07
雪崩能效等级(Eas):84 mJ外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):1.7 A最大漏极电流 (ID):1.7 A
最大漏源导通电阻:4.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):6.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFIBC20G 数据手册

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IRFIBC20G, SiHFIBC20G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Isolated Package  
600  
Available  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
R
DS(on) (Ω)  
VGS = 10 V  
4.4  
RoHS*  
Qg (Max.) (nC)  
18  
3.0  
COMPLIANT  
• Sink to Lead Creepage Distance = 4.8 mm  
• Dynamic dV/dt Rating  
Q
Q
gs (nC)  
gd (nC)  
8.9  
• Low Thermal Resistance  
Configuration  
Single  
• Lead (Pb)-free Available  
D
TO-220 FULLPAK  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. The isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
S
N-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFIBC20GPbF  
SiHFIBC20G-E3  
IRFIBC20G  
Lead (Pb)-free  
SnPb  
SiHFIBC20G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
V
VGS  
20  
T
C = 25 °C  
1.7  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC =100°C  
1.1  
Pulsed Drain Currenta  
IDM  
6.8  
Linear Derating Factor  
0.24  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
84  
1.7  
EAR  
3.0  
mJ  
W
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
PD  
30  
3.0  
dV/dt  
TJ, Tstg  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 53 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12).  
c. ISD 2.2 A, dI/dt 40 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91179  
S-81273-Rev. A, 16-Jun-08  
www.vishay.com  
1

IRFIBC20G 替代型号

型号 品牌 替代类型 描述 数据表
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