IRFIBC30G

更新时间： 2024-11-23 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1318K
描述
Power MOSFET

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中文翻译

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数据手册
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IRFIBC30G 数据手册

IRFIBC30G, SiHFIBC30G

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

600

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

R_DS(on)(Ω)

V_GS= 10 V

2.2

RoHS*

COMPLIANT

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

4.6

_gs(nC)

_gd(nC)

• Low Thermal Resistance

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220 FULLPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFIBC30GPbF

SiHFIBC30G-E3

IRFIBC30G

Lead (Pb)-free

SnPb

SiHFIBC30G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.5

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

1.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.28

250

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

2.5

E_AR

3.5

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 73 mH, R_G= 25 Ω, I_AS= 2.5 A (see fig. 12).

c. I_SD≤ 3.6 A, dI/dt ≤ 60 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91180

S-Pending-Rev. A, 16-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFIBC30G 替代型号

型号	品牌	替代类型	描述	数据表
IRFIBC30GPBF	VISHAY	类似代替	Power MOSFET

与IRFIBC30G相关器件

型号	品牌	获取价格	描述	数据表
IRFIBC-30G	VISHAY	获取价格	Power MOSFET
IRFIBC30GPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFIBC30GPBF	VISHAY	获取价格	Power MOSFET
IRFIBC40	INFINEON	获取价格	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
IRFIBC40G	INFINEON	获取价格	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
IRFIBC40G	VISHAY	获取价格	Power MOSFET
IRFIBC40GLC	INFINEON	获取价格	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
IRFIBC40GLC	VISHAY	获取价格	Power MOSFET
IRFIBC40GLCPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFIBC40GPBF	INFINEON	获取价格	HEXFET Power MOSFET

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