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IRFE330 PDF预览

IRFE330

更新时间: 2024-11-01 11:09:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 131K
描述
REPETITIVE AVALANCHE AND dv/dt RATED

IRFE330 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, LCC-18Reach Compliance Code:compliant
风险等级:5.13其他特性:AVALANCHE RATED
雪崩能效等级(Eas):0.51 mJ外壳连接:SOURCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:1.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CQCC-N15JESD-609代码:e0
元件数量:1端子数量:15
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):22 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFE330 数据手册

 浏览型号IRFE330的Datasheet PDF文件第2页浏览型号IRFE330的Datasheet PDF文件第3页浏览型号IRFE330的Datasheet PDF文件第4页浏览型号IRFE330的Datasheet PDF文件第5页浏览型号IRFE330的Datasheet PDF文件第6页浏览型号IRFE330的Datasheet PDF文件第7页 
PD - 9.1718A  
IRFE330  
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U  
HEXFET® TRANSISTOR  
JANTXV2N6800U  
[REF:MIL-PRF-19500/557]  
N-CHANNEL  
Product Summary  
400Volt, 1.0, HEXFET  
The leadless chip carrier (LCC) package represents  
the logical next step in the continual evolution of  
surface mount technology. The LCC provides  
designers the extra flexibility they need to increase  
circuit board density. International Rectifier has  
engineered the LCC package to meet the specific  
needs of the power market by increasing the size of  
the bottom source pad, thereby enhancing the  
thermal and electrical performance. The lid of the  
package is grounded to the source to reduce RF  
interference.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFE330  
400V  
1.0Ω  
3.0A  
Features:  
n Hermetically Sealed  
n Simple Drive Requirements  
n Ease of Paralleling  
n Small footprint  
n Surface Mount  
n Lightweight  
HEXFET transistors also feature all of the well-es-  
tablished advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling  
and electrical parameter temperature stability.They  
are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits, and  
virtually any application where high reliability is re-  
quired.  
Absolute Maximum Ratings  
Parameter  
IRFE330, JANTX-, JANTXV-, 2N6800U Units  
I
D
@ V  
= -10V, T = 25°C Continuous Drain Current  
3.0  
GS  
C
A
I
D
@ V  
= -10V, T = 100°C Continuous Drain Current  
2.0  
12  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
25  
W
W/K ➄  
V
D
C
0.20  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
GS  
E
AS  
dv/dt  
0.51  
8.4  
mJ  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( for 5 seconds)  
0.42 (typical)  
Surface Temperature  
Weight  
www.irf.com  
1
3/25/98  

IRFE330 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N6800U INFINEON

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