IRFE330SCS

更新时间： 2024-11-01 13:08:47

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IRFE330SCS 数据手册

PD - 9.1718A

IRFE330

REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U

HEXFET^®TRANSISTOR

JANTXV2N6800U

[REF:MIL-PRF-19500/557]

N-CHANNEL

Product Summary

400Volt, 1.0Ω, HEXFET

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology. The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the

thermal and electrical performance. The lid of the

package is grounded to the source to reduce RF

interference.

Part Number

BVDSS

RDS(on)

IRFE330

400V

1.0Ω

3.0A

Features:

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

n Small footprint

n Surface Mount

n Lightweight

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability.They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits, and

virtually any application where high reliability is re-

quired.

Absolute Maximum Ratings

Parameter

IRFE330, JANTX-, JANTXV-, 2N6800U Units

@ V

= -10V, T = 25°C Continuous Drain Current

3.0

@ V

= -10V, T = 100°C Continuous Drain Current

2.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/K ➄

0.20

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

0.51

8.4

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

300 ( for 5 seconds)

0.42 (typical)

Surface Temperature

Weight

www.irf.com

3/25/98

12 3 4 5 6 7 8

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