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IRFE330SCV PDF预览

IRFE330SCV

更新时间: 2024-11-01 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 131K
描述
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

IRFE330SCV 数据手册

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PD - 9.1718A  
IRFE330  
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U  
HEXFET® TRANSISTOR  
JANTXV2N6800U  
[REF:MIL-PRF-19500/557]  
N-CHANNEL  
Product Summary  
400Volt, 1.0, HEXFET  
The leadless chip carrier (LCC) package represents  
the logical next step in the continual evolution of  
surface mount technology. The LCC provides  
designers the extra flexibility they need to increase  
circuit board density. International Rectifier has  
engineered the LCC package to meet the specific  
needs of the power market by increasing the size of  
the bottom source pad, thereby enhancing the  
thermal and electrical performance. The lid of the  
package is grounded to the source to reduce RF  
interference.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFE330  
400V  
1.0Ω  
3.0A  
Features:  
n Hermetically Sealed  
n Simple Drive Requirements  
n Ease of Paralleling  
n Small footprint  
n Surface Mount  
n Lightweight  
HEXFET transistors also feature all of the well-es-  
tablished advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling  
and electrical parameter temperature stability.They  
are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits, and  
virtually any application where high reliability is re-  
quired.  
Absolute Maximum Ratings  
Parameter  
IRFE330, JANTX-, JANTXV-, 2N6800U Units  
I
D
@ V  
= -10V, T = 25°C Continuous Drain Current  
3.0  
GS  
C
A
I
D
@ V  
= -10V, T = 100°C Continuous Drain Current  
2.0  
12  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
25  
W
W/K ➄  
V
D
C
0.20  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
GS  
E
AS  
dv/dt  
0.51  
8.4  
mJ  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( for 5 seconds)  
0.42 (typical)  
Surface Temperature  
Weight  
www.irf.com  
1
3/25/98  

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