Datasheet > 晶体管 > 功率场效应晶体管> IRFE330SCVPBF

IRFE330SCVPBF

更新时间： 2024-11-01 13:01:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	131K
描述
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFE330SCVPBF 数据手册

PD - 9.1718A

IRFE330

REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U

HEXFET^®TRANSISTOR

JANTXV2N6800U

[REF:MIL-PRF-19500/557]

N-CHANNEL

Product Summary

400Volt, 1.0Ω, HEXFET

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology. The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the

thermal and electrical performance. The lid of the

package is grounded to the source to reduce RF

interference.

Part Number

BVDSS

RDS(on)

IRFE330

400V

1.0Ω

3.0A

Features:

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

n Small footprint

n Surface Mount

n Lightweight

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability.They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits, and

virtually any application where high reliability is re-

quired.

Absolute Maximum Ratings

Parameter

IRFE330, JANTX-, JANTXV-, 2N6800U Units

@ V

= -10V, T = 25°C Continuous Drain Current

3.0

@ V

= -10V, T = 100°C Continuous Drain Current

2.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/K ➄

0.20

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

0.51

8.4

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

300 ( for 5 seconds)

0.42 (typical)

Surface Temperature

Weight

www.irf.com

3/25/98

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFE330SCVPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFE330SCX	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Meta
IRFE420	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFE430	INFINEON	获取价格	HEXFET TRANSISTOR
IRFE430PBF	INFINEON	获取价格	暂无描述
IRFE430SCS	INFINEON	获取价格	暂无描述
IRFE430SCV	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE430SCVPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE430SCX	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE430SCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE9024	INFINEON	获取价格	60V, P-CHANNEL

与IRFE330SCVPBF相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFE330SCVPBF

IRFE330SCVPBF 数据手册

与IRFE330SCVPBF相关器件

与IRFE330SCVPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFE330SCVPBF

IRFE330SCVPBF 数据手册

与IRFE330SCVPBF相关器件

与IRFE330SCVPBF相关文章

您还可以找

您在本页遇到什么问题？