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IRF8301MPBF

更新时间： 2024-11-24 01:06:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 344K
描述
Ultra-low Package Inductance

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IRF8301MPBF 数据手册

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StrongIRFET  
IRF8301MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l Ultra-low RDS(on)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Low Profile (<0.7 mm)  
30V max ±20V max  
1.3mΩ@10V 1.9mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra-low Package Inductance  
l Optimized for high speed switching or high current  
switch (Power Tool)  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MT  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MP  
MT  
Description  
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by  
80%.  
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.  
Ordering Information  
Base Part Number  
Package Type  
Standard Pack  
Form  
Tape and Reel  
Orderable Part Number  
Quantity  
4800  
IRF8301MPbF  
DirectFET MT  
IRF8301MTRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
±20  
34  
Units  
V
GS  
I
I
I
I
@ TA = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
27  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
192  
250  
260  
25  
DM  
Single Pulse Avalanche Energy  
Avalanche Current  
EAS  
IAR  
mJ  
A
6
5
4
3
2
1
0
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 32A  
I = 25A  
D
D
V
= 24V  
= 15V  
DS  
V
DS  
T
= 125°C  
J
T
= 25°C  
5
J
0
10  
15  
20  
0
10  
20  
30  
40  
50  
60  
Q , Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
www.irf.com © 2013 International Rectifier  
September 6, 2013  
1
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