Datasheet > IRF8301MTRPBF

IRF8301MTRPBF

更新时间： 2022-02-26 11:21:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	344K
描述
DirectFETPower MOSFET

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IRF8301MTRPBF 数据手册

StrongIRFET

IRF8301MTRPbF

DirectFET Power MOSFET

Typical values (unless otherwise specified)

l Ultra-low R_DS(on)

V_DSS

V_GS

R_DS(on)

l Low Profile (<0.7 mm)

30V max ±20V max

1.3mΩ@10V 1.9mΩ@ 4.5V

l Dual Sided Cooling Compatible

l Ultra-low Package Inductance

l Optimized for high speed switching or high current

switch (Power Tool)

l Low Conduction and Switching Losses

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve

very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

80%.

The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.

Ordering Information

Base Part Number

Package Type

Standard Pack

Form

Tape and Reel

Orderable Part Number

Quantity

4800

IRF8301MPbF

DirectFET MT

IRF8301MTRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

±20

Units

@ T_A= 25°C

Continuous Drain Current, V_GS@ 10V

@ T_A= 70°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

192

250

260

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

5.0

4.0

3.0

2.0

1.0

0.0

= 32A

I = 25A

= 24V

= 15V

= 125°C

= 25°C

Q , Total Gate Charge (nC)

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

September 6, 2013

12 3 4 5 6 7...10

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