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IRF8304MTRPBF

更新时间： 2024-01-10 23:02:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 291K
描述
Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

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IRF8304MTRPBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：1.49Is Samacsys：N
雪崩能效等级（Eas）：190 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：170 A最大漏极电流 (ID)：28 A
最大漏源导通电阻：0.0022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W最大脉冲漏极电流 (IDM)：220 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF8304MTRPBF 数据手册

 浏览型号IRF8304MTRPBF的Datasheet PDF文件第2页浏览型号IRF8304MTRPBF的Datasheet PDF文件第3页浏览型号IRF8304MTRPBF的Datasheet PDF文件第4页浏览型号IRF8304MTRPBF的Datasheet PDF文件第5页浏览型号IRF8304MTRPBF的Datasheet PDF文件第6页浏览型号IRF8304MTRPBF的Datasheet PDF文件第7页 
IRF8304MPbF  
DirectFET® Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
1.7mΩ@ 10V 2.4mΩ@ 4.5V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
28nC  
7.9nC 4.2nC  
39nC  
21nC  
1.8V  
l Optimized for both Sync.FET and some Control FET  
application  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET® ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®  
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.  
Base Part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Quantity  
IRF8304MPbF  
DirectFET MX  
Tape and Reel  
4800  
IRF8304MTRPbF  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VDS  
30  
±20  
28  
Drain-to-Source Voltage  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
22  
@ TA = 70°C  
@ TC = 25°C  
A
170  
220  
190  
22  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
6
5
4
3
2
1
0
14.0  
12.0  
10.0  
8.0  
I
= 28A  
I = 22A  
D
D
V
V
V
= 24V  
= 15V  
= 6.0V  
DS  
DS  
DS  
6.0  
T
= 125°C  
J
4.0  
T
= 25°C  
5
2.0  
J
0.0  
0
10  
15  
20  
0
10  
20  
Q
30  
40  
50  
60  
70  
80  
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 22A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
February 17, 2014  
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