IRF830ALPBF

更新时间： 2024-11-23 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	160K
描述
Power MOSFET

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数据手册

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IRF830ALPBF 数据手册

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

_DS(on)(Max.) (Ω)

V_GS= 10 V

1.40

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Q_g(Max.) (nC)

6.3

COMPLIANT

_gs(nC)

_gd(nC)

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Configuration

Single

• Effective C_ossspecified

• Lead (Pb)-free Available

I²PAK

(TO-262)

D²PAK

(TO-263)

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

N-Channel MOSFET

• Half Bridge and Full Bridge

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF830ASPbF

D²PAK (TO-263)

IRF830ASTRLPbF^a

SiHF830ASTL-E3^a

IRF830ASTRL^a

I²PAK (TO-262)

IRF830ALPbF

SiHF830AL-E3

IRF830AL

Lead (Pb)-free

SiHF830AS-E3

IRF830AS

SnPb

SiHF830AS

SiHF830ASTL^a

SiHF830AL

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

5.0

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

3.2

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

0.59

230

W/°C

E_AS

I_AR

5.0

Repetiitive Avalanche Energy^a

E_AR

7.4

_A= 25 °C

3.1

Maximum Power Dissipation

P_D

V/ns

°C

T_C= 25 °C

Peak Diode Recovery dV/dt^{c, e}

dV/dt

5.3

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 18 mH, R_G= 25 Ω, I_AS= 5.0 A (see fig. 12).

c. I_SD≤ 5.0 A, dI/dt ≤ 370 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses SiHF830A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91062

S-81352-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

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