Datasheet > IRF830S (KRF830S)

IRF830S (KRF830S)

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	1986K
描述
N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF830S (KRF830S) 数据手册

浏览型号IRF830S (KRF830S)的Datasheet PDF文件第2页

浏览型号IRF830S (KRF830S)的Datasheet PDF文件第3页

浏览型号IRF830S (KRF830S)的Datasheet PDF文件第4页

浏览型号IRF830S (KRF830S)的Datasheet PDF文件第5页

浏览型号IRF830S (KRF830S)的Datasheet PDF文件第6页

SMD Type

MOSFET

N-Channel MOSFET

IRF830S (KRF830S)

■ Features

● VDS (V) = 500V

● ID = 4.5 A (VGS = 10V)

● R^DS(ON)＜ 1.5Ω (VGS = 10V)

● Fast Switching

● Repetitive Avalanche Rated

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

500

±20

4.5

Unit

Gate-Source Voltage

Tc=25℃

Continuous Drain Current

2.9

Tc=100℃

Pulsed Drain Current

Avalanche Current

4.5

Tc=25℃

Ta=25℃

Power Dissipation

3.1

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note1)

(Note 2)

280

7.4

dv/dt

3.5

V/ns

Thermal Resistance.Junction- to-Ambient

thJA

Thermal Resistance.Junction- to-Ambient (PCB Mount)

Thermal Resistance.Junction- to-Case

Junction Temperature

℃/W

RthJC

1.7

150

-55 to 150

℃

Storage Temperature Range

stg

Note.1: L = 24mH, IAS = 4.5A, VDD = 50V, R

= 25 Ω, Starting T

J = 25°C.

Note.2: I^SD= 4.5A, di/dt = 75 A/μs, VDD = V(BR)DSS, Starting T

= 25°C.

www.kexin.com.cn

12 3 4 5 6

中文翻译

下载PDF

与IRF830S (KRF830S)相关器件

型号	品牌	获取价格	描述	数据表
IRF830S, SiHF830S, IRF830L, SiHF830L	VISHAY	获取价格	Power MOSFET
IRF830SPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF830STRL	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF830STRLPBF	VISHAY	获取价格	暂无描述
IRF830T	MOTOROLA	获取价格	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF830U	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF830U2	MOTOROLA	获取价格	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF830UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF830WC	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF831	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Met