Datasheet > IRF830ASTRR

IRF830ASTRR

更新时间： 2024-09-20 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	187K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 5A I(D) \| TO-263AB

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中文翻译

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数据手册

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IRF830ASTRR 数据手册

PD- 92006A

SMPS MOSFET

IRF830AS/L

HEXFET^®Power MOSFET

Applications

V_DSS

500V

R_DS(on)max

I_D

5.0A

l Switch Mode Power Supply (SMPS)

l Uninterruptable Power Supply

l High Speed Power Switching

1.40Ω

Benefits

l Low Gate Charge Qg Results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified (See AN 1001)

D²Pak

TO-262

Absolute Maximum Ratings

Parameter

Max.

5.0

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

3.2

3.1

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.59

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.3

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topologies:

l Two Transistor Forward

l Half Bridge and Full Bridge

Notes through ꢀare on page 10

www.irf.com

5/4/00

12 3 4 5 6 7...10

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