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IRF8308MPBF_15

更新时间： 2024-09-24 01:21:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 271K
描述
Dual Sided Cooling Compatible

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IRF8308MPBF_15 数据手册

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IRF8308MPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
30V max ±20V max  
1.9mΩ@ 10V 2.7mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
28nC  
8.2nC 3.5nC  
34nC  
20nC  
1.8V  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MX  
Description  
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-  
state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries  
used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is  
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power  
systems, improving previous best thermal resistance by 80%.  
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.  
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher  
frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-  
induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.  
Standard Pack  
Orderable part number  
Package Type  
Note  
Form  
Quantity  
4800  
IRF8308MTRPbF  
IRF8308MTR1PbF  
DirectFET Medium Can  
DirectFET Medium Can  
Tape and Reel  
Tape and Reel  
"TR" suffix  
"TR1" suffix EOL notice # 264  
1000  
Absolute Maximum Ratings  
Max.  
Parameter  
Drain-to-Source Voltage  
Units  
V
VDS  
30  
±20  
27  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
21  
A
@ TA = 70°C  
@ TC = 25°C  
150  
212  
12  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
21  
12  
8
6
4
2
0
I = 21A  
V
= 24V  
I
= 27A  
D
DS  
VDS= 15V  
D
10  
8
6
T
= 125°C  
= 25°C  
J
4
T
J
2
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
20  
40  
60  
80  
V
, Gate-to-Source Voltage (V)  
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
February 24, 2014  
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