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IRF8306MTRPBF

更新时间： 2024-11-27 01:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 280K
描述
HEXFET Power MOSFET plus Schottky Diode

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IRF8306MTRPBF 数据手册

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PD - 97670  
IRF8306MPbF  
IRF8306MTRPbF  
HEXFET® Power MOSFET plus Schottky Diode ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant Containing No Lead and Halogen Free   
l Integrated Monolithic Schottky Diode  
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
1.8mΩ@ 10V 2.8mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
25nC  
6.7nC 3.0nC  
29nC  
22nC  
1.8V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
S
S
G
D
D
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further  
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC  
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for  
parameters that are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
23  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
18  
A
@ TA = 70°C  
@ TC = 25°C  
140  
180  
230  
18  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
14.0  
12.0  
10.0  
8.0  
10  
8
I = 18A  
V
V
= 24V  
I
= 23A  
D
DS  
DS  
D
= 15V  
VDS= 6V  
6
T
= 125°C  
6.0  
J
4
4.0  
2
2.0  
T
= 25°C  
6
J
0.0  
0
2
4
8
10 12 14 16 18 20  
0
20  
Q
40  
60  
80  
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
5/4/11  
1234567...9

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