PD - 97670
IRF8306MPbF
IRF8306MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
Typical values (unless otherwise specified)
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max
1.8mΩ@ 10V 2.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
25nC
6.7nC 3.0nC
29nC
22nC
1.8V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
S
S
G
D
D
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MP
MX
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
23
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
18
A
@ TA = 70°C
@ TC = 25°C
140
180
230
18
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
14.0
12.0
10.0
8.0
10
8
I = 18A
V
V
= 24V
I
= 23A
D
DS
DS
D
= 15V
VDS= 6V
6
T
= 125°C
6.0
J
4
4.0
2
2.0
T
= 25°C
6
J
0.0
0
2
4
8
10 12 14 16 18 20
0
20
Q
40
60
80
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
5/4/11
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