Datasheet > IRF8308MTR1PBF

IRF8308MTR1PBF

更新时间： 2022-02-26 13:32:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	271K
描述
RoHs Compliant Containing No Lead and Bromide

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF8308MTR1PBF 数据手册

IRF8308MPbF

DirectFET Power MOSFET

l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)

Typical values (unless otherwise specified)

V_DSS

V_GS

R_DS(on)

l Dual Sided Cooling Compatible

l Ultra Low Package Inductance

30V max ±20V max

1.9mΩ@ 10V 2.7mΩ@ 4.5V

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters

28nC

8.2nC 3.5nC

34nC

20nC

1.8V

l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses

l Compatible with existing Surface Mount Techniques

l 100% Rg tested

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-

state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries

used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is

followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, improving previous best thermal resistance by 80%.

The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.

The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher

frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-

induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Standard Pack

Orderable part number

Package Type

Note

Form

Quantity

4800

IRF8308MTRPbF

IRF8308MTR1PbF

DirectFET Medium Can

Tape and Reel

"TR" suffix

"TR1" suffix EOL notice # 264

1000

Absolute Maximum Ratings

Max.

Parameter

Drain-to-Source Voltage

Units

V_DS

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

150

212

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

I = 21A

= 24V

= 27A

VDS= 15V

= 125°C

= 25°C

2.0

4.0

6.0

8.0

10.0

, Gate-to-Source Voltage (V)

Total Gate Charge (nC)

Fig 1. Typical On-Resistance Vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.051mH, R_G= 25Ω, I_AS= 21A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Submit Datasheet Feedback

February 24, 2014

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF8308MTR1PBF相关器件

型号	品牌	描述	获取价格	数据表
IRF8308MTRPBF	INFINEON	RoHs Compliant Containing No Lead and Bromide	获取价格
IRF830A	VISHAY	Power MOSFET	获取价格
IRF830A	INFINEON	HEXFET Power MOSFET	获取价格
IRF830A	KERSEMI	Low Gate Charge Qg Results in Simple Drive Requirement	获取价格
IRF830A16A	MOTOROLA	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格
IRF830AF	MOTOROLA	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格
IRF830AJ	MOTOROLA	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格
IRF830AL	INFINEON	Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)	获取价格
IRF830AL	VISHAY	Power MOSFET	获取价格
IRF830ALPBF	INFINEON	HEXFET㈢ Power MOSFET	获取价格
IRF830ALPBF	VISHAY	Power MOSFET	获取价格
IRF830APBF	INFINEON	HEXFET Power MOSFET	获取价格
IRF830APBF	VISHAY	Power MOSFET	获取价格
IRF830APBF	KERSEMI	Low Gate Charge Qg Results in Simple Drive Requirement	获取价格
IRF830AS	VISHAY	Power MOSFET	获取价格
IRF830AS	INFINEON	Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)	获取价格
IRF830AS	NJSEMI	Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK	获取价格
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL	VISHAY	Power MOSFET	获取价格
IRF830ASPBF	VISHAY	Power MOSFET	获取价格
IRF830ASPBF	INFINEON	HEXFET㈢ Power MOSFET	获取价格