PD -97671
IRF8308MPbF
IRF8308MTRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max
1.9mΩ@ 10V 2.7mΩ@ 4.5V
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
28nC
8.2nC 3.5nC
34nC
20nC
1.8V
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
27
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
21
A
@ TA = 70°C
@ TC = 25°C
150
212
12
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
21
8
6
4
2
0
12
10
8
I = 21A
V
= 24V
I
= 27A
D
DS
VDS= 15V
D
6
T
= 125°C
= 25°C
8.0
J
4
T
J
2
0
2.0
4.0
6.0
10.0
0
20
40
60
80
V
, Gate-to-Source Voltage (V)
GS
Q
Total Gate Charge (nC)
G
Fig 1. Typical On-Resistance Vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
5/4/11
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