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IRF8308MPBF

更新时间： 2024-11-23 12:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 277K
描述
RoHs Compliant Containing No Lead and Bromide

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IRF8308MPBF 数据手册

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PD -97671  
IRF8308MPbF  
IRF8308MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
1.9mΩ@ 10V 2.7mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
28nC  
8.2nC 3.5nC  
34nC  
20nC  
1.8V  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck  
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt  
immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
27  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
21  
A
@ TA = 70°C  
@ TC = 25°C  
150  
212  
12  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
21  
8
6
4
2
0
12  
10  
8
I = 21A  
V
= 24V  
I
= 27A  
D
DS  
VDS= 15V  
D
6
T
= 125°C  
= 25°C  
8.0  
J
4
T
J
2
0
2.0  
4.0  
6.0  
10.0  
0
20  
40  
60  
80  
V
, Gate-to-Source Voltage (V)  
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
5/4/11  
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