IRF630FP

更新时间： 2024-11-18 00:04:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	113K
描述
N-MOSFET

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IRF630FP 数据手册

IRF630

IRF630FP

N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP

MESH OVERLAY MOSFET

TYPE

IRF630

IRF630FP

V_DSS

R_DS(on)

I_D

200 V

< 0.40 Ω

9 A

■

TYPICAL R_DS(on)= 0.35 Ω

EXTREMELY HIGH dV/dt CAPABILITY

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY process. This technology matches

and improves the performances compared with

standardparts from various sources.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

IRF630

IRF630FP

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 k

Gate-source Voltage

200

)

Ω

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

9(**)

5.7(**)

I_D

5.7

0.6

I_DM(• )

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.20

W/^oC

V/ns

^oC

dv/dt( ) Peak Diode Recovery voltage slope

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

2000

-65 to 150

150

Max. Operating Junction Temperature

•

≤

≤ ≤

V_(BR)DSS, Tj T_JMAX

( ) Pulse width limited by safe operating area

( 1) I_SD9A, di/dt 300 A/ s, V_DD

First Digit of the Datecode Being Z or K IdentifiesSilicon Characterized in this Datasheet

(**) Limited only by Maximum Temperature Allowed

1/9

February 1999

12 3 4 5 6 7...10

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