5秒后页面跳转
IRF6215PBF PDF预览

IRF6215PBF

更新时间: 2024-11-12 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 174K
描述
HEXFET㈢ Power MOSFET

IRF6215PBF 数据手册

 浏览型号IRF6215PBF的Datasheet PDF文件第2页浏览型号IRF6215PBF的Datasheet PDF文件第3页浏览型号IRF6215PBF的Datasheet PDF文件第4页浏览型号IRF6215PBF的Datasheet PDF文件第5页浏览型号IRF6215PBF的Datasheet PDF文件第6页浏览型号IRF6215PBF的Datasheet PDF文件第7页 
PD - 94817  
IRF6215PbF  
HEXFET® Power MOSFET  
Advanced Process Technology  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = -150V  
P-Channel  
Fully Avalanche Rated  
Lead-Free  
RDS(on) = 0.29Ω  
G
ID = -13A  
S
Description  
Fifth Generation HEXFETs from InternationalRectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrialapplicationsatpowerdissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220  
contribute to its wide acceptance throughout the  
industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
-13  
-9.0  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current ꢀ  
A
-44  
PD @TC = 25°C  
Power Dissipation  
110  
W
W/°C  
V
Linear Derating Factor  
0.71  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energyꢁ  
Avalanche Currentꢀ  
310  
mJ  
A
-6.6  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energyꢀ  
Peak Diode Recovery dv/dt ꢂ  
Operating Junction and  
11  
mJ  
V/ns  
-5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.4  
–––  
62  
°C/W  
11/5/03  

IRF6215PBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF6215 INFINEON

完全替代

Advanced Planar Technology Low On-Resistance
IRF6215 INFINEON

功能相似

HEXFET?? Power MOSFET

与IRF6215PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF6215RLPBF VISHAY

获取价格

Advanced Process Technology
IRF6215S INFINEON

获取价格

HEXFET Power MOSFET
IRF6215SL INFINEON

获取价格

Advanced Process Technology
IRF6215SPBF INFINEON

获取价格

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.
IRF6215STRL INFINEON

获取价格

Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215STRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215STRR INFINEON

获取价格

Advanced Process Technology
IRF6215STRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6216 INFINEON

获取价格

SMPS MOSFET
IRF6216PBF INFINEON

获取价格

HEXFET Power MOSFET