IRF6215L

更新时间： 2024-11-12 11:09:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	174K
描述
HEXFET Power MOSFET

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数据手册

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IRF6215L 数据手册

PD - 91643

IRF6215S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF6215S)

l Low-profile through-hole (IRF6215L)

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

Description

V_DSS= -150V

R_DS(on)= 0.29Ω

I_D= -13A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF6215L) is available for low-

profileapplications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

-13

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10Vꢀ

Pulsed Drain Current ꢀ

-9.0

-44

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

110

0.71

± 20

310

-6.6

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

°C/W

5/13/98

12 3 4 5 6 7...10

中文翻译

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与IRF6215L相关器件

型号	品牌	获取价格	描述	数据表
IRF6215LPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.
IRF6215PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF6215RLPBF	VISHAY	获取价格	Advanced Process Technology
IRF6215S	INFINEON	获取价格	HEXFET Power MOSFET
IRF6215SL	INFINEON	获取价格	Advanced Process Technology
IRF6215SPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.
IRF6215STRL	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215STRR	INFINEON	获取价格	Advanced Process Technology
IRF6215STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met