IRF2204LPBF

更新时间： 2024-11-05 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	253K
描述
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A )

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF2204LPBF 数据手册

PD - 95491

^{AUTOMOTIVE MOSFET}IRF2204SPbF

IRF2204LPbF

Typical Applications

HEXFET^®Power MOSFET

Electric Power Steering

14 Volts Automotive Electrical Systems

Lead-Free

V_DSS= 40V

_DS(on)= 3.6mΩ

I_D= 170A

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the lastest processing techniques to

achieveextremelylow on-resistancepersiliconarea. Additional

featurestothisdesignarea175°Cjunctionoperatingtemperature,

fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications

and a wide variety of other applications.

D²Pak

IRF2204S

TO-262

IRF2204L

Absolute Maximum Ratings

Parameter

Max.

170

120

850

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

460

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

www.irf.com

06/30/04

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRF2204LPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF2204PBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me
IRF2204S	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2204SPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) =
IRF2204STRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 170A I(D) \| TO-263AB
IRF2204STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 170A I(D) \| TO-263AB
IRF2204STRRPBF	INFINEON	获取价格	暂无描述
IRF220E	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRF220EA	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRF220EB	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRF220EC	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se