是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.14 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 460 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0036 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 225 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 850 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF2204SPBF | INFINEON |
功能相似 |
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF2204SPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = | |
IRF2204STRL | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB | |
IRF2204STRR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB | |
IRF2204STRRPBF | INFINEON |
获取价格 |
暂无描述 | |
IRF220E | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF220EA | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF220EB | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF220EC | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF220ECPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF220ED | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |