Datasheet > IRF223

IRF223

更新时间： 2024-11-05 22:48:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	72K
描述
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

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IRF223 数据手册

Semiconductor

IRF220, IRF221,

IRF222, IRF223

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,

N-Channel Power MOSFETs

October 1997

Features

Description

• 4.0A and 5.0A, 150V and 200V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

• r

DS(ON)

= 0.8Ω and 1.2Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA09600.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Ordering Information

PART NUMBER

IRF220

PACKAGE

TO-204AA

BRAND

IRF220

IRF221

TO-204AA

IRF221

IRF222

IRF223

IRF222

IRF223

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1567.2

12 3 4 5 6 7

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