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IRF230 PDF预览

IRF230

更新时间: 2024-11-05 22:31:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 73K
描述
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

IRF230 数据手册

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Semiconductor  
IRF230, IRF231,  
IRF232, IRF233  
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm,  
N-Channel Power MOSFETs  
October 1997  
Features  
Description  
• 8.0A and 9.0A, 150V and 200V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching conver-  
tors, motor drivers, relay drivers, and drivers for high power  
bipolar switching transistors requiring high speed and low  
gate drive power. These types can be operated directly from  
integrated circuits.  
• r  
DS(ON)  
= 0.4and 0.6Ω  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA17412.  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Ordering Information  
D
S
PART NUMBER  
IRF230  
PACKAGE  
TO-204AA  
BRAND  
IRF230  
G
IRF231  
IRF232  
IRF233  
TO-204AA  
TO-204AA  
TO-204AA  
IRF231  
IRF232  
IRF233  
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC TO-204AA  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1568.2  
Copyright © Harris Corporation 1997  
1

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