是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 9 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N6756 | INFINEON |
功能相似 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF230-233 | FAIRCHILD |
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N-Channel Power MOSFETs, 12A, 150-200 V | |
IRF230E | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF230EAPBF | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF230EB | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF230EBPBF | INFINEON |
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9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
IRF230EC | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF230ECPBF | INFINEON |
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9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
IRF230ED | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF230EPBF | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF230N | NJSEMI |
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Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |