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2N6756

更新时间: 2024-10-30 20:15:43
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 147K
描述
Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

2N6756 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.08Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):75 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:100 V最大漏极电流 (ID):14 A
最大漏源导通电阻:0.18 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):56 A认证状态:Not Qualified
参考标准:MILITARY STANDARD (USA)子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N6756 数据手册

 浏览型号2N6756的Datasheet PDF文件第2页浏览型号2N6756的Datasheet PDF文件第3页浏览型号2N6756的Datasheet PDF文件第4页浏览型号2N6756的Datasheet PDF文件第5页浏览型号2N6756的Datasheet PDF文件第6页浏览型号2N6756的Datasheet PDF文件第7页 
PD - 90333F  
IRF130  
JANTX2N6756  
JANTXV2N6756  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
THRU-HOLE (TO-204AA/AE)  
[REF:MIL-PRF-19500/542]  
100V, N-CHANNEL  
Product Summary  
Part Number BVDSS RDS(on)  
IRF130 100V 0.18Ω  
ID  
14A  
The HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on-state resis-  
tance combined with high transconductance; superior re-  
verse energy and diode recovery dv/dt capability.  
TO-3  
The HEXFET transistors also feature all of the well estab-  
lished advantages of MOSFETs such as voltage control,  
very fast switching, ease of paralleling and temperature  
stability of the electrical parameters.  
Features:  
n
n
n
n
n
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
They are well suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high energy pulse circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
=0V, T = 25°C  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
14  
9.0  
D
GS  
C
A
I
D
= 0V, T = 100°C  
C
GS  
I
56  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.60  
±20  
75  
V
GS  
Gate-to-Source Voltage  
E
AS  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
I
14  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
11.5(typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/22/01  

2N6756 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6756 INFINEON

完全替代

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
IRF130 INFINEON

完全替代

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

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