TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542
DEVICES
LEVELS
JAN
2N6762
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Symbol
Value
Unit
VDS
VGS
500
±20
Vdc
Vdc
Gate – Source Voltage
Continuous Drain Current
ID1
ID2
Ptl
4.5
3.0
Adc
Adc
W
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Max. Power Dissipation
75 (1)
TO-204AA
(TO-3)
2N6762
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
1.5 (2)
Ω
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 3A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
Symbol Min. Max.
Unit
V(BR)DSS
500
Vdc
Vdc
V
GS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
V
DS ≥ VGS, ID = 0.25mA
DS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
Gate Current
IGSS1
IGSS2
±100
±200
VGS = ±20V, VDS = 0V
nAdc
V
GS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 400V
IDSS1
IDSS2
IDSS3
25
1.0
µAdc
mAdc
V
V
GS = 0V, VDS = 500V, Tj = +125°C
GS = 0V, VDS = 400V, Tj = +125°C
0.25 mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
1.5
1.80
3.3
Ω
Ω
Ω
V
V
GS = 10V, ID = 4.5A pulsed
GS = 10V, ID = 3.0A pulsed, Tj = +125°C
Diode Forward Voltage
GS = 0V, ID = 4.5A pulsed
VSD
1.4
Vdc
V
T4-LDS-0151 Rev. 2 (100858)
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